AM20P10-250D
Features
:
- Low r DS(on) trench technology
- Low thermal impedance
- Fast switching speed
Typical Applications:
- Po E Power Sourcing Equipment
- Po E Powered Devices
- Tele DC/DC converters
- White LED boost converters
VDS (V) -100
PRODUCT SUMMARY r DS(on) (mΩ)
295 @ VGS = -10V 590 @ VGS = -4.5V
ID(A) -11 -8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS -100
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current b
TC=25°C
ID IDM
-11 -40
Continuous Source Current (Diode Conduction)
IS -15
Power Dissipation
TC=25°C
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient a Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
Symbol RθJA RθJC
Maximum 40 3
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction...
