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AM2304N Datasheet PDF

Analog Power AM2304N

N-Channel 30-V (D-S) MOSFET

Part No. AM2304N
Datasheet AM2304N Download
Manufacturer
Analog Power
Description N-Channel 30-V (D-S) MOSFET
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AM2304N datasheet page 1 preview

FEATURES

:
● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical

APPLICATIONS

:
● Power Routing
● Li Ion Battery Packs
● Level Shifting and Driver Circuits AM2304N VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 12 @ VGS = 10V 18 @ VGS = 4.5V ID (A) 8.5 7.0

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID 8.5 6.7 IDM 40 IS 1.9 Power Dissipation a TA=25°C TA=70°C PD 1.3 0.8 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 100 166 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM2304N_1A Analog Power AM2304N...
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