Analog Power AM2305PE
P-Channel MOSFET
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● White LED boost converters
● Automotive Systems
● Industrial DC/DC Conversion Circuits AM2305PE VDS (V) -20 PRODUCT SUMMARY rDS(on) (mΩ) 43 @ VGS = -4.5V 54 @ VGS = -2.5V 120 @ VGS = -1.8V ID(A) -4.5 -4.1 -2.7
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS -4.5 -3.6 -20 -1.8 Power Dissipation a TA=25°C TA=70°C PD 1.3 0.8 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 100 166 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Or...