Analog Power AM2308NE
N-Channel 30-V (D-S) MOSFET
| Part No. | AM2308NE |
|---|---|
| Datasheet | AM2308NE Download |
| Manufacturer |  Analog Power |
| Description | N-Channel 30-V (D-S) MOSFET |
| Buy | Stock & Price |
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● Power Routing
● Li Ion Battery Packs
● Level Shifting and Driver Circuits AM2308NE VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 60 @ VGS = 4.5V 82 @ VGS = 2.5V ID (A) 3.5 3.0
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±12 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID 3.5 2.8 IDM 15 IS 1.9 Power Dissipation a TA=25°C TA=70°C PD 1.3 0.8 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 100 166 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM2308NE_1A Analog Power AM23...
