AM2309P
AM2309P is P-Channel 20-V MOSFET manufactured by Analog Power.
Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, cellular and cordless telephones.
- Low r DS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe SOT-23 saves board space
- Fast switching speed
- High performance trench technology
PRODUCT SUMMARY
VDS (V) r DS(on) (OHM)
-20 0.026 @ VGS = -4.5V 0.035 @ VGS = -2.5V
ID (A) -5.7 -4.9
ABSOLUTE MAXIMUM RATINGS (TA = 25 o C UNLESS OTHERWISE NOTED)
Parame te r
Symbol Ratings Units
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25o C TA=70o C
-20 V
±8
-5.7
-4.7
-10
TA=25o C TA=70o C
TJ, Tstg -55 to 150 o C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta t <= 5 sec Steady-State
Symbol RTHJA
Maximum 100 150
Units o C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
1 PRELIMINARY
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