AM2326N Datasheet | Analog Power

Analog Power N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. - Low r DS(on) Provides Higher Efficiency and Extends Battery Life - Miniature SOT-23 Surface Mount Package Saves Board Space PRODUCT SUMMARY 1.8-V Rated VDS (V) r DS(on) (Ω) 0.070 @ VGS = 4.5V 20 0.080@ VGS = 2.5V 0.120@ VGS = 1.8V ID (A) 2.2 2.0 1.8 ABSOLUTE MAXIMUM RATINGS (TA = 25 o C UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb TA=25o C TA=70o C 20 V ±8 2.2 1.8 A 8 Continuous Source Current (Diode Conduction)a IS 0.6 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25o C TA=70o C TJ, Tstg 1.25 0.8 -55 to 150 W o C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature July, 2002 - Rev. A...