Analog Power AM2342NE
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TA=25oC TA=70oC ID 40 V ±20 5.2 4.1 A IDM 30 IS 1.6 A TA=25oC TA=70oC PD 1.3 W 0.8 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol RθJA Maximum 100 166 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM2342NE_A Analog Power AM2342NE Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Ti...