Analog Power AM2371P
P-Channel 100-V (D-S) MOSFET
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● PoE Power Sourcing Equipment
● PoE Powered Devices
● Telecom DC/DC converters
● White LED boost converters PRODUCT SUMMARY rDS(on) (Ω) 1.2 @ VGS = -10V 1.3 @ VGS = -4.5V VDS (V) -100 ID(A) -1 -0.9
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 TA=25°C -1 ID Continuous Drain Current a TA=70°C -0.8 IDM Pulsed Drain Current b -10 a I -1.6 Continuous Source Current (Diode Conduction) S T =25°C 1.3 A PD Power Dissipation a TA=70°C 0.8 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 100 RθJA 166 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number...