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Analog Power
AM2390N
N-Channel 150-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters
PRODUCT SUMMARY rDS(on) (Ω) 0.7 @ VGS = 10V 1.2 @ VGS = 4.5V
VDS (V) 150
ID(A) 1.1 0.8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 TA=25°C 1.1 ID Continuous Drain Current a TA=70°C 0.9 b IDM Pulsed Drain Current 5 a I 1.6 Continuous Source Current (Diode Conduction) S T =25°C 1.3 A PD Power Dissipation a TA=70°C 0.8 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range
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AM2390N Datasheet
