AM25P03-60D Datasheet | Analog Power

Analog Power P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as puters, printers, battery charger, telemunication power system, and telephones power system. - Low r DS(on) Provides Higher Efficiency and Extends Battery Life - Miniature TO-252 Surface Mount Package Saves Board Space - High power and current handling capability - Extended VGS range (±25) for battery pack applications PRODUCT SUMMARY VDS (V) r DS(on) m(Ω) -26.5 59 @ VGS = -4.5V 95 @ VGS = -2.5V ID (A) 24 19 ABSOLUTE MAXIMUM RATINGS (TA = 25 o C UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TA=25o C ID IDM -26.5 V ±12 24 A ±40 -30 TA=25o C PD TJ, Tstg -55 to 175 o C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units o C/W o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction...