Analog Power AM30N02-40D
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TC=25oC ID IDM 20 V ±12 34 A 40 IS 30 A TC=25oC PD 50.0 W TJ, Tstg -55 to 175 oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature November, 2003 - Rev. A PRELIMINARY 1 Publication Order Number: DS-AM30N02-40_C Analog Power AM30N02-40D SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage Dynamicb...