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Analog Power
P-Channel 200-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
AM3413P
VDS (V) -200
PRODUCT SUMMARY rDS(on) (mΩ)
2400 @ VGS = -10V 2550 @ VGS = -4.5V
ID (A) -0.74 -0.72
TSOP-6
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS -200
Gate-Source Voltage
VGS ±20
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
-0.74 -0.61
-5 -2
Power Dissipation a
TA=25°C TA=70°C
PD
2 1.