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AM3413P - P-Channel MOSFET

Key Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed Typical.

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Datasheet Details

Part number AM3413P
Manufacturer Analog Power
File Size 303.33 KB
Description P-Channel MOSFET
Datasheet download datasheet AM3413P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Analog Power P-Channel 200-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM3413P VDS (V) -200 PRODUCT SUMMARY rDS(on) (mΩ) 2400 @ VGS = -10V 2550 @ VGS = -4.5V ID (A) -0.74 -0.72 TSOP-6 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -200 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS -0.74 -0.61 -5 -2 Power Dissipation a TA=25°C TA=70°C PD 2 1.