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AM3599CE - N & P-Channel MOSFET

Datasheet Summary

Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed Typical.

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Datasheet Details

Part number AM3599CE
Manufacturer Analog Power
File Size 365.10 KB
Description N & P-Channel MOSFET
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Analog Power AM3599CE N & P-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • DC/DC Conversion • Power Routing • Motor Drives VDS (V) 30 -30 PRODUCT SUMMARY rDS(on) (mΩ) 90 @ VGS = 10V 130 @ VGS = 4.5V 190 @ VGS = -10V 290 @ VGS = -4.5V ID (A) 3.0 2.5 -2.1 -1.7 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 3.0 -2.1 2.3 -1.6 10 -10 1.4 -1.2 Power Dissipation a TA=25°C TA=70°C PD 1.15 1.15 0.7 0.
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