AM35N03-59D Datasheet | Analog Power

Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. - Low r DS(on) provides higher efficiency and extends battery life - Low thermal impedance copper leadframe DPAK saves board space - Fast switching speed - High performance trench technology PRODUCT SUMMARY VDS (V) r DS(on) m(Ω) 59 @ VGS = 4.5V 88 @ VGS = 2.5V ID (A) 24 20 ABSOLUTE MAXIMUM RATINGS (TA = 25 o C UNLESS OTHERWISE NOTED) Parame te r Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TC=25o C ID IDM 30 V ±12 24 A TC=25o C PD TJ, Tstg -55 to 175 o C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units o C/W o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY Publication Order...