Analog Power AM3906N
Dual N-Channel MOSFET
| Part No. | AM3906N |
|---|---|
| Datasheet | AM3906N Download |
| Manufacturer |  Analog Power |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TA=25oC TA=70oC ID 30 V ±20 2.5 2 A IDM 10 IS ±0.8 A TA=25oC TA=70oC PD 0.95 W 0.7 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol Maximum Units RΤΗ JA 130 oC/W 176 July, 2002 - Rev. A PRELIMINARY 1 Publication Order Number: DS-AM3906_A Analog Power AM3906N SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parame te r Symbol Test Conditions Limits Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage V(BR)DSS VGS(th) VGS = 0 V, ID = -250 uA VDS = VGS, ID = -250 uA 30 V 1.00 1.85 3.1 Gate-Body...
