Analog Power AM40N08-30D
MOSFET
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● White LED boost converters
● Automotive Systems
● Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 26 @ VGS = 10V 36 @ VGS = 4.5V VDS (V) 80 ID(A) 36 31
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 TA=25°C ID 36 Continuous Drain Current a IDM Pulsed Drain Current b 100 IS 49 Continuous Source Current (Diode Conduction) a a T =25°C P 50 Power Dissipation A D TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Units V A A W °C THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol Maximum RθJA 40 RθJC 3 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM40N08-30D_1A Datasheet pdf - Analog Power Electr...