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AM40N10-30I Datasheet PDF

Analog Power AM40N10-30I

N-Channel MOSFET

Part No. AM40N10-30I
Datasheet AM40N10-30I Download
Manufacturer
Analog Power
Description N-Channel MOSFET
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AM40N10-30I datasheet page 1 preview

FEATURES

:
● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical

APPLICATIONS

:
● White LED boost converters
● Automotive Systems
● Industrial DC/DC Conversion Circuits AM40N10-30I VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 36 @ VGS = 10V 42 @ VGS = 4.5V ID (A) 31 29 TO-251

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C TC=25°C VGS ID IDM IS PD ±20 31.0 80 40 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient c Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 40 3 Units °C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. © Preliminary 1 Publication Order Number: DS_AM4...
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