Analog Power AM4300N
N-Channel MOSFET
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● PoE PSE and PD Circuits
● LED Inverter Circuits
● 48V-Input DC/DC Conversion Circuits AM4300N VDS (V) 150 PRODUCT SUMMARY rDS(on) (mΩ) 65 @ VGS = 10V 75 @ VGS = 5.5V ID (A) 5.7 5.3 SO-8
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 5.7 4.8 30 4.1 Power Dissipation a TA=25°C TA=70°C PD 3.1 2.2 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 40 80 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse wid