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Analog Power
N-Channel 150-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • PoE PSE and PD Circuits • LED Inverter Circuits • 48V-Input DC/DC Conversion Circuits
AM4300N
VDS (V) 150
PRODUCT SUMMARY rDS(on) (mΩ)
65 @ VGS = 10V 75 @ VGS = 5.5V
ID (A) 5.7 5.3
SO-8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±20
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
5.7 4.8 30 4.1
Power Dissipation a
TA=25°C TA=70°C
PD
3.1 2.
AM4300N Datasheet
