Analog Power AM4394N
MOSFET
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● White LED boost converters
● Automotive Systems
● Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 50 @ VGS = 10V 60 @ VGS = 5.5V VDS (V) 150 ID(A) 6.5 5.9 SO-8
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 TA=25°C 6.5 ID Continuous Drain Current a TA=70°C 5.5 b IDM Pulsed Drain Current 50 a I 4.6 Continuous Source Current (Diode Conduction) S T =25°C 3.1 A PD Power Dissipation a TA=70°C 2.2 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 40 RθJA 80 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM4394N_1A Datashee...