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Analog Power
AM4470N
N-Channel 200-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY rDS(on) (mΩ) 295 @ VGS = 10V 335 @ VGS = 4.5V
VDS (V) 200
ID(A) 2.7 2.5
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 TA=25°C 2.7 ID Continuous Drain Current a TA=70°C 2.2 b IDM Pulsed Drain Current 15 a I 2.8 Continuous Source Current (Diode Conduction) S T =25°C 3.1 A PD Power Dissipation a TA=70°C 2.2 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range
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AM4470N Datasheet
