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AM4490NE - MOSFET

Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed Typical.

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Datasheet Details

Part number AM4490NE
Manufacturer Analog Power
File Size 557.48 KB
Description MOSFET
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Full PDF Text Transcription

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Analog Power AM4490NE N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters PRODUCT SUMMARY rDS(on) (mΩ) 78 @ VGS = 10V 92 @ VGS = 4.5V VDS (V) 100 ID(A) 5.2 4.8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 TA=25°C 5.2 ID Continuous Drain Current a TA=70°C 4.4 b IDM Pulsed Drain Current 50 a I 3 Continuous Source Current (Diode Conduction) S T =25°C 3.1 A PD Power Dissipation a TA=70°C 2.2 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range www.DataSheet.co.
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