Analog Power AM4963P
Dual P-Channel MOSFET
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● White LED boost converters
● Automotive Systems
● Industrial DC/DC Conversion Circuits VDS (V) -60 PRODUCT SUMMARY rDS(on) (mΩ) 120 @ VGS = -10V 180 @ VGS = -4.5V ID(A) -3.5 -2.8
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS -3.5 -2.7 -15 -2.4 Power Dissipation a TA=25°C TA=70°C PD 2.1 1.3 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 62.5 110 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board.