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AM4970N - Dual N-Channel MOSFET

Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed Typical.

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Datasheet Details

Part number AM4970N
Manufacturer Analog Power
File Size 297.12 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AM4970N Datasheet
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Full PDF Text Transcription

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Analog Power AM4970N Dual N-Channel 200-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE PSE and PD Circuits • LED Inverter Circuits • 48V-Input DC/DC Conversion Circuits VDS (V) 200 PRODUCT SUMMARY rDS(on) (mΩ) 300 @ VGS = 10V 340 @ VGS = 4.5V ID (A) 2.2 2.1 SO-8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 2.2 1.7 30 2.9 Power Dissipation a TA=25°C TA=70°C PD 2.1 1.
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