Analog Power AM4990NE
MOSFET
| Part No. | AM4990NE |
|---|---|
| Datasheet | AM4990NE Download |
| Manufacturer |  Analog Power |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● PoE Power Sourcing Equipment
● PoE Powered Devices
● Telecom DC/DC converters
● White LED boost converters PRODUCT SUMMARY rDS(on) (mΩ) 81 @ VGS = 10V 92 @ VGS = 4.5V VDS (V) 100 ID(A) 4.2 4.0
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 TA=25°C 4.2 ID Continuous Drain Current a TA=70°C 3.3 b IDM Pulsed Drain Current 30 a I 3 Continuous Source Current (Diode Conduction) S T =25°C 2.1 A PD Power Dissipation a TA=70°C 1.3 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 62.5 RθJA 110 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM4...
