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Analog Power
AM4990NE
Dual N-Channel 100-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters
PRODUCT SUMMARY rDS(on) (mΩ) 81 @ VGS = 10V 92 @ VGS = 4.5V
VDS (V) 100
ID(A) 4.2 4.0
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 TA=25°C 4.2 ID Continuous Drain Current a TA=70°C 3.3 b IDM Pulsed Drain Current 30 a I 3 Continuous Source Current (Diode Conduction) S T =25°C 2.1 A PD Power Dissipation a TA=70°C 1.3 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range
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AM4990NE Datasheet
