Analog Power AM50P02-16D
P-Channel MOSFET
| Part No. | AM50P02-16D |
|---|---|
| Datasheet | AM50P02-16D Download |
| Manufacturer |  Analog Power |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TA=25oC ID IDM -20 V ±8 46 A ±40 IS -30 A TA=25oC PD 50 W TJ, Tstg -55 to 175 oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM50P02-16_A Analog Power AM50P02-16D SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parame te r Symbol Test Conditions Limits Unit Min Typ Max Static Gate-Threshold Voltage VGS(th) VDS = VGS, ID = -250 uA -0.4 Gate-Body Leakage IGSS VDS = 0 V, VGS = ±8 V ±100 nA Zero Gate Voltage Drain Current On-State Drain CurrentA IDSS ID...
