AM5829P Datasheet | Analog Power

Analog Power P-Channel 20-V (D-S) MOSFET With Schottky Diode These miniature surface mount MOSFETs utilize a MOSFET PRODUCT SUMMARY high cell density trench process to provide low VDS (V) r DS(on) (OHM) ID (A) r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and -20 0.110 @VGS = -4.5V ±3.6 0.160 @VGS = -2.5V ±3.0 battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A) - Low r DS(on) provides higher efficiency and extends battery life - Low thermal impedance copper leadframe CF1206-8 saves board space 0.48V @ 1.0A CF1206-8 Top View A1 8K - Fast switching speed - High performance trench technology S3 G4 6D 5D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 o C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage (MOSFET) -20 Reverse Voltage (Schottky) Gate-Source Voltage...