Analog Power AM60N03-09D
N-Channel MOSFET
| Part No. | AM60N03-09D |
|---|---|
| Datasheet | AM60N03-09D Download |
| Manufacturer |  Analog Power |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● DC/DC Conversion
● Power Routing
● Motor Drives AM60N03-09D VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 9 @ VGS = 10V 16 @ VGS = 4.5V ID (A) 61 46
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C VGS ID IDM IS PD ±20 61 200 50 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 40 3 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © 1 Publication Order Number: DS_AM60N03-09D_1A Analog Power AM60N03-09DELECTRICAL CHARACTERISTICS
Parameter Gate-Source Thr...
