Analog Power AM60P04-10D
P-Channel MOSFET
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● Automotive Systems
● DC/DC Conversion Circuits
● Battery Powered Power Tools AM60P04-10D VDS (V) -40 PRODUCT SUMMARY rDS(on) (mΩ) 10 @ VGS = -10V 13 @ VGS = -4.5V ID (A) -58 -51
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -40 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C VGS ID IDM IS PD ±20 -58 -200 -54 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 40 3 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temper