AM6520C Datasheet | Analog Power

Analog Power P & N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as puters, printers, battery charger, telemunication power system, and telephones power system. VDS (V) 20 -20 r DS(on) m(Ω) 47 @ VGS = 4.5V 66 @ VGS = 2.5V 95 @ VGS = 1.8V 47 @ VGS = -4.5V 72 @ VGS = -2.5V 95 @ VGS = -1.8V - Low r DS(on) Provides Higher Efficiency and Extends Battery Life TSSOP-8 Top View D1 - Miniature TSSOP-8 Surface Mount Package D1 1 Saves Board Space S1 2 S1 3 - High power and current handling capability G1 4 - Low side high current DC-DC Converter 8 D2 7 S2 G1 6 S2 5 G2 S1 N-Channel MOSFET applications ID (A) 4.7 3.9 3.3 -4.7 -3.8 -3.3 S2 G2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 o C UNLESS OTHERWISE NOTED) Parame te r Symbol N-Channel P-Channel Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb TA=25o C TA=70o C 20 8 -20 -8 4.7 -4.7 3.8 -3.8 A ±50...