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AM7000N - N-Channel MOSFET

Key Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed Typical.

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Datasheet Details

Part number AM7000N
Manufacturer Analog Power
File Size 446.64 KB
Description N-Channel MOSFET
Datasheet download datasheet AM7000N Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Analog Power N-Channel 200-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE PSE and PD Circuits • LED Inverter Circuits • 48V-Input DC/DC Conversion Circuits AM7000N VDS (V) 200 PRODUCT SUMMARY rDS(on) (mΩ) 295 @ VGS = 10V 340 @ VGS = 5.5V ID (A) 3 2.7 DFN3x3-8L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 3 2.2 20 4.6 Power Dissipation a TA=25°C TA=70°C PD 3.