AM7442N Datasheet | Analog Power

Analog Power N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. - - - - Low r DS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8PP saves board space Fast switching speed High performance trench technology PRO DUCT SUM M A RY V ) r DS(on) m (Ω ) DS (V 9 @V G S = 10V 40 12 @ V G S = 4.5V SOIC-8PP Top View S S S G 1 2 3 4 8 7 6 5 D D D D ID (A ) 20 17 G S N-Channel MOSFET ABSOLUTE MAX IMUM RATING S (TA = 25 C UNLESS OTHERW ISE NOTED) Param eter Sym bol Lim it Units VDS Drain-Source Voltage 40 V ±20 G ate-Source Voltage VGS .Data Sheet.co.kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM ±20 ±16 ±50 2.3 5.0 3.2 A W o Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o Operating Junction and Storage Tem perature Range TJ, Tstg -55 to 150 T H E RMA L RE SIST A NC E RA T ING S Param eter M axim um Junction-to-Am bient a Sym bol RθJA t <= 10 sec Steady State Maxim u m U n its o 25 C/W 65 o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM7442_B Datasheet pdf - http://..net/ Analog Power SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A A...