AM7931P Datasheet | Analog Power

Analog Power Dual P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, munication equipments. PRODUCT SUMMARY VDS (V) r DS(on) m(Ω) -30 13 @ VGS = 10V 18 @ VGS = 4.5V ID (A) 29 25 - Low r DS(on) provides higher efficiency and extends battery life - Low thermal impedance copper leadframe SOIC-8PP saves board space - Fast switching speed - High performance trench technology ABSOLUTE MAXIMUM RATINGS (TA = 25 o C UNLESS OTHERWISE NOTED) Paramete r Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb TA=25o C TA=70o C -30 V 20 29 24 A ±50 Continuous Source Current (Diode Conduction)a 13 A Power Dissipationa TA=25o C TA=70o C Operating Junction and Storage Temperature Range TJ, Tstg 16 10 -55 to 150 W o C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Symbol RθJA RθJC Maximum 35 8 Units o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY...