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Analog Power
N-Channel 600-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • Off-line Power Supplies • Electronic Ballasts • High Power LED Lighting
AM8N60P
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
600 1 @ VGS = 10V
ID(A) 8a
DRAIN connected to TAB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current a
TC=25°C
ID IDM
8 50
Continuous Source Current (Diode Conduction)
TC=25°C
IS
8
Power Dissipation
TC=25°C
PD
150
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient Maximum Junction-to-Case
THERMA
AM8N60P Datasheet
