Analog Power AM90N03-26P
MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units VDS Drain-Source Voltage 30 V ±20 Gate-Source Voltage VGS o Continuous Drain Current Pulsed Drain Current Power Dissipation a b a o TC =25 C ID 88 140 40 300 IDM a o A A W o Continuous Source Current (Diode Conduction) IS TC =25 C P D Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 C T H E RMA L RESIST A NC E RA TING S Param eter Sym bol M axim umJunction-to-Am bient M axim umJunction-to-Case a Maxim u m U nits 62.5 0.5 o o RθJA RθJC C/W C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM90N03-26_A Datasheet pdf - Analog Power AM90N03-26P SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A o Symbol VGS(th) IGSS IDSS ID(on) A Test Conditions VDS = VGS, ID = 250 uA VDS = 0 V, VGS = 20 V Limit...