Analog Power AM90N06-03P
MOSFET
| Part No. | AM90N06-03P |
|---|---|
| Datasheet | AM90N06-03P Download |
| Manufacturer |  Analog Power |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● White LED boost converters
● Automotive Systems
● Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 3 @ VGS = 10V 4 @ VGS = 5.5V VDS (V) 60 ID(A) 90a DRAIN connected to TAB
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 TA=25°C ID 90 Continuous Drain Current a IDM Pulsed Drain Current b 360 IS 90 Continuous Source Current (Diode Conduction) a a T =25°C P 300 Power Dissipation A D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range Units V A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case a Symbol Maximum RθJA 62.5 RθJC 1 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM90N06-03P_1A Datasheet pdf...
