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Analog Power
AM90N06-10P
N-Channel 60-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters
PRODUCT SUMMARY rDS(on) (mΩ) 9.9 @ VGS = 10V 13 @ VGS = 4.5V
VDS (V) 60
ID(A) 90a
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 TC=25°C ID 90 Continuous Drain Current a IDM Pulsed Drain Current b 240 IS 90 Continuous Source Current (Diode Conduction) a a T =25°C P 120 Power Dissipation C D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range
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AM90N06-10P Datasheet
