Datasheet Summary
Analog Power N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, and cordless telephones.
PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 16.5 @ VGS = 10V 60 21 @ VGS = 4.5V
ID (A) 90 a
D1
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Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TO-220 saves board space Fast switching speed High performance trench technology
G1 S1 N-Channel MOSFET
ABSOLUTE MAXIMUM...