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Analog Power
N-Channel 200-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
AM90N20-140B
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
200 240 @ VGS = 10V
ID (A) 29
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current a
TC=25°C
ID IDM
29 100
Continuous Source Current (Diode Conduction)
TC=25°C
IS
29
Power Dissipation
TC=25°C
PD
300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A A W °C
Maximum Junction-to-Ambient a Maximum Junction-to-Case
T
AM90N20-140B Datasheet
