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AM90P10-300B Datasheet PDF

Analog Power AM90P10-300B

P-Channel MOSFET

Part No. AM90P10-300B
Datasheet AM90P10-300B Download
Manufacturer
Analog Power
Description P-Channel MOSFET
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AM90P10-300B datasheet page 1 preview

FEATURES

:
● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical

APPLICATIONS

:
● White LED boost converters
● Automotive Systems
● Industrial DC/DC Conversion Circuits AM90P10-300B VDS (V) -100 PRODUCT SUMMARY rDS(on) (mΩ) 300 @ VGS = -10V 330 @ VGS = -5.5V ID (A) -26

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -100 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C TC=25°C VGS ID IDM IS PD ±20 -26 -100 -26 300 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient c Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 0.5 Units °C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. © Preliminary 1 Publication Order Number: D...
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