AM9N65P Datasheet PDF

FEATURES

:
● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical

APPLICATIONS

:
● Off-line Power Supplies
● Electronic Ballasts
● High Power LED Lighting AM9N65P VDS (V) 650 PRODUCT SUMMARY rDS(on) (Ω) 1.7 @ VGS = 10V 1.8 @ VGS = 6V ID(A) 9a DRAIN connected to TAB

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current a TC=25°C ID IDM 9 50 Continuous Source Current (Diode Conduction) TC=25°C IS 9 Power Dissipation TC=25°C PD 150 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 1 Units °C/W Notes a. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM9N65P_1A Analog Power AM9N65P

ELECTRICAL CHARACTERISTICS

Parameter Symbol Test...