Analog Power AMD510C
N & P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol N-Channel P-Channel Units Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currenta TA=25oC TA=70oC ID Pulsed Drain Currentb IDM Continuous Source Current (Diode Conduction)a IS Power Dissipationa TA=25oC PD Operating Junction and Storage Temperature Range TJ, Tstg 100 -100 ±20 ±20 16 -12 30 -32 40 -40 30 -30 50 50 -55 to 175 V A A W oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AMD510C_A Analog Power AMD510C SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Tranconductancea Dynamic T...