Analog Power AMD531C
N & P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC ID IDM 30 -30 20 -20 51 -41.0 ±40 ±40 Continuous Source Current (Diode Conduction)a IS 30 -30 Power Dissipationa TA=25oC PD 50 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 -55 to 175 Units V A A W oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature July, 2005 - Rev. A PRELIMINARY 1 Publication Order Number: DS-AMD531_B Analog Power AMD531C SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parame te r Symbol Test Conditions Limits Ch Min Typ Static Gate-Threshold Voltage VGS(th) VGS = VDS, ID = 250 uA VGS = VDS, ID = -250 uA N1 P -1 Gate-Body Leakage Zero Gate Voltage Drai...