Analog Power AMD534CE
N & P-Channel MOSFET
| Part No. | AMD534CE |
|---|---|
| Datasheet | AMD534CE Download |
| Manufacturer |  Analog Power |
| Description | N & P-Channel MOSFET |
| Buy | Stock & Price |
Analog Power AMD534CE P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 30 45 @VGS = 4.5V 35 @VGS =10V -30 33 @VGS =-4.5V 23 @VGS = -10V ID (A) 29 36 -32 39
● Low rDS(on) provides higher efficiency and extends battery life D1 S 2
● Low thermal impedance copper leadframe DPAK saves board space G 1 G 2
● Fast switching speed
● High performance trench technology S1 G1 D S2 G2 S 1 N-Channel MOSFET D2 P-Channel MOSFET ESD Protected 2000V ABSOLUTE MAXIMUMRATINGS (TA = 25 oCUNLESS OTHERWISENOTED) Parameter Symbol N-Channel P-Channel Units Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currenta TA=25oC TA=70oC ID Pulsed Dr...
● Low rDS(on) provides higher efficiency and extends battery life D1 S 2
● Low thermal impedance copper leadframe DPAK saves board space G 1 G 2
● Fast switching speed
● High performance trench technology S1 G1 D S2 G2 S 1 N-Channel MOSFET D2 P-Channel MOSFET ESD Protected 2000V ABSOLUTE MAXIMUMRATINGS (TA = 25 oCUNLESS OTHERWISENOTED) Parameter Symbol N-Channel P-Channel Units Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currenta TA=25oC TA=70oC ID Pulsed Dr...
