AMF920NE Datasheet | Analog Power

Analog Power Dual N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. PRODUCT SUMMARY VDS (V) r DS(on) m(Ω) 22 @ VGS = 4.5V 28 @ VGS = 2.5V D1 ID (A) 11 9.2 D2 - Low r DS(on) provides higher efficiency and extends battery life - Low thermal impedance copper leadframe DFN2x5-6PP saves board space - Fast switching speed - High performance trench technology DFN2x5-6PP Bottom View G1 G2 S2 6 S2 5 G2 4 Drain 1 S1 2 S1 3 G1 S1 S2 N-Channel N-Channel ESD Protected MOSFET MOSFET 2000V ABSOLUTE MAXIMUM RATINGS (TA = 25 o C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb TA=25o C TA=70o C 20 V ±...