RFP-100-20AE-S - Flanged Attenuators

This page provides the datasheet information for the RFP-100-20AE-S, a member of the RFP-100-6AE-S Flanged Attenuators family.

Product Overview

Anaren Microwave

Part number	RFP-100-20AE-S
Manufacturer	Anaren Microwave
File Size	230.09 KB
Description	Flanged Attenuators
Datasheet	RFP-100-20AE-S Datasheet
Additional preview pages of the RFP-100-20AE-S datasheet.

DC.
See table.
100 Watts.
BEO Ceramic.
Welded Silver Leads.
Non-Nichrome Resistive Element.
Low VSWR.
100% Tested Lead(s): Operating Temperature Electrical Specifications Attenuation Range: Frequency Range: Power: V. S. W. R. : 1, 2, 3, 4, 5, 6, 9, 10, 20, 22 or 30 dB DC.
See Chart 100 Watts See Chart Notes: Tolerance is ±0.010”, unless otherwise specified. Designed to meet of exceed applicable portions of MIL-E-54.

RFP-250-xxx - Coaxial Terminations (Anaren)
RFP-250250-4AAxx - Surface Mount Attenuators (Anaren)
RFP10N12 - (RFP10N12 / RFP10N15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS (GE Solid State)
RFP10N12 - (RFP10N12 / RFP10N15) N-Channel Power MOSFET (Harris Semiconductor)
RFP10N12L - (RFP10N12L / RFP10N15L) N-Channel Logic Level Power MOSFET (Harris Semiconductor)
RFP10N12L - (RFP10N12L / RFP10N15L) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS (GE Solid State)
RFP10N15 - N-Channel Power MOSFET (Intersil Corporation)
RFP10N15 - (RFP10N12 / RFP10N15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS (GE Solid State)
RFP10N15 - (RFP10N12 / RFP10N15) N-Channel Power MOSFET (Harris Semiconductor)
RFP10N15L - (RFP10N12L / RFP10N15L) N-Channel Logic Level Power MOSFET (Harris Semiconductor)

Other Datasheets by Anaren Microwave

Published: Dec 8, 2009 |