• Part: APM3020P
  • Description: P-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Anpec Electronics Coropration
  • Size: 660.28 KB
Download APM3020P Datasheet PDF
Anpec Electronics Coropration
APM3020P
APM3020P is P-Channel MOSFET manufactured by Anpec Electronics Coropration.
Features - -30V/-11A, RDS(ON) = 17mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -5V Pin Description - Super High Density Cell Design - Reliable and Rugged .. - TO-252 Package Applications Top View of TO-252 - Power Management in Notebook puter, Portable Equipment and Battery Powered Systems Ordering and Marking Information APM 3020P H a n d lin g C o d e T e m p. R a ng e P a c ka g e C o d e P ackage C ode U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 2 5 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel APM 3020P U : APM 3020P XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID- IDM PD Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating -30 ±20 -40 -70 50 20 Unit V A W Maximum Drain Current - Continuous Maximum Drain Current - Pulsed Maximum Power Dissipation TA=25 ºC TA=100 ºC ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 1 .anpec..tw Absolute Maximum Ratings Symbol TJ TSTG RθJC Parameter Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Case (TA = 25°C unless otherwise noted) Rating 150 -55 to 150 2.5 Unit ºC ºC ºC/W .. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa b (TA = 25°C unless otherwise noted) APM3020P Min. -30 -1 -1 17 24 -1.3 23 10 9 VDD=-15V , IDS=-6A , VGEN=-10 V , RG=1Ω RL=2.5Ω VGS=0V VDS=-25V Frequency=1.0MHz 16 22 75 31 3720 580 245 p F 30 30 120 80 ns -3 ±100 20 30 -1.3 30 n C Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage VGS=0V , IDS=-250A Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VDS=-24V , VGS=0V VDS=VGS...