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APM2055N - N-Channel MOSFET

General Description

H andling C ode Temp.

O peration Junction Tem p.

Key Features

  • 20V/12A, RDS(ON)=55mΩ(typ. ) @ V =10V GS RDS(ON)=75mΩ(typ. ) @ VGS=4.5V RDS(ON)=140mΩ(typ. ) @ VGS=2.5V.
  • Super High Dense Cell Design.
  • High Power and Current Handling Capability.
  • TO-252 and SOT-223 Packages.

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Datasheet Details

Part number APM2055N
Manufacturer Anpec Electronics
File Size 149.51 KB
Description N-Channel MOSFET
Datasheet download datasheet APM2055N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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APM2055N N-Channel Enhancement Mode MOSFET Features • 20V/12A, RDS(ON)=55mΩ(typ.) @ V =10V GS RDS(ON)=75mΩ(typ.) @ VGS=4.5V RDS(ON)=140mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • High Power and Current Handling Capability • TO-252 and SOT-223 Packages Applications • Switching Regulators • Switching Converters Pin Description 123 GD S Top View of TO-252 1 23 GDS Top View of SOT-223 D G Ordering and Marking Information S N-Channel MOSFET APM2055N H andling C ode Temp. Range Package Code Package Code U : TO -252 V : SO T-223 O peration Junction Tem p.