APM3011N
APM3011N is N-Channel MOSFET manufactured by Anpec Electronics.
Features
- -
..
Pin Description
30V/60A , RDS(ON)=9mΩ(typ.) @ VGS=10V RDS(ON)=14mΩ(typ.) @ VGS=5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-220, TO-252 and TO-263 Packages
- -
Applications
- Power Management in Desktop puter or DC/DC Converters Systems.
Top View of TO-220 , TO-252 and TO-263
Ordering and Marking Information
Handling Code Temp. Range Package Code Package Code F : TO-220 U :TO-252 Temp. Range C : 0 to 70 ° C Handling Code TU : Tube TR : Tape & Reel G : TO-263
APM 3011N G/U/F :
APM 3011N XXXXX
XXXXX
- Date Code
Absolute Maximum Ratings
Symbol VDSS VGSS ID- IDM Gate-Source Voltage Parameter Drain-Source Voltage
(TA = 25°C unless otherwise noted)
Rating 30 ±20 60 120 Unit V A
Maximum Drain Current
- Continuous Maximum Drain Current
- Pulsed
- Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3
- Mar., 2002 1 .anpec..tw
Absolute Maximum Ratings Cont.
Symbol PD Parameter Maxim um Power Dissipation T A =25 ° C T A =100 ° C TJ
..
(TA = 25°C unless otherwise noted)
Rating TO-252 TO-263 TO-252 TO-263 50 62.5 20 25 150 -55 to 150 50 2.5 Unit W
W °C °C ° C/W ° C/W
Maxim um Junction Tem perature Storage Tem perature Range Thermal Resistance
- Junction to Ambient Thermal Resistance
- Junction to Case
T STG R θ JA R θ JC
Electrical Characteristics
Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSda Dynamicb Qg Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Parameter Drain-Source Breakdown V lt Gate Voltage Drain Zero Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input...