Datasheet Summary
Dual Enhancement Mode MOSFET (N- and P-Channel)
Features
- N-Channel
30V/7A,
RDS(ON) = 20mΩ (typ.) @ VGS = 10V
R DS(ON)
=
30mΩ
(typ.)
@
V GS
=
4.5V
- P-Channel
-30V/-5A,
RDS(ON) = 40mΩ (typ.) @ VGS = -10V RDS(ON) = 62mΩ (typ.) @ VGS = -4.5V
- Super High Dense Cell Design
- Reliable and Rugged
- Lead Free and Green Devices Available
(RoHS pliant)
Applications
- Power Management in Notebook puter,
Portable Equipment and Battery Powered Systems
Pin Description
D1 D1 D2 D2
S1 G1 S2 G2
Top View of SOP
- 8
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