Datasheet Details
| Part number | CR100-8 |
|---|---|
| Manufacturer | Apollo Electron |
| File Size | 755.79 KB |
| Description | Sensitive Gate Silicon Controlled Rectifiers |
| Datasheet | CR100-8-ApolloElectron.pdf |
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Overview: CR100-8 Sensitive Gate Silicon Controlled Rectifiers Symbol ○ 3. Anode ▼ ○ 2.Gate 1.Cathode ○ BVDRM = 600V IT(RMS) = 1.
| Part number | CR100-8 |
|---|---|
| Manufacturer | Apollo Electron |
| File Size | 755.79 KB |
| Description | Sensitive Gate Silicon Controlled Rectifiers |
| Datasheet | CR100-8-ApolloElectron.pdf |
|
|
|
TO-92 1 2 3 Sensitive-gate triggering thyristor is suit able for the a pplication where g ate cu rrent lim ited such as small motor control, gate driver for large thyristor, sensing and detecting circuits.
We supply IGT=30㎂~100㎂ level products for customer's special requirement.
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified ) Symbol Parameter Condition VDRM IT(AV) IT(RMS) ITSM I2t Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing sine wave,50 to 60Hz half sine wave : TC = 83 °C All Conduction Angle 1/2 Cycle, 60Hz, sine wave non-repetitive , t = 8.3ms t = 8.3ms PGM PG(AV) IFGM VRGM TJ TSTG Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature TA = 25 °C, pulse width ≤ 1.0㎲ TA = 25 °C, t = 8.3ms TA = 25 °C, pulse width ≤ 1.0㎲ TA = 25 °C, pulse width ≤ 1.0㎲ Ratings 600 0.5 1.0 10 0.415 2 0.1 1 5.0 - 40 ~ 110 - 40 ~ 150 Units V A A A A2s W W A V °C °C April, 2010.
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