CR100-8 - Sensitive Gate Silicon Controlled Rectifiers

General Description

Sensitive-gate triggering thyristor is suit able for the a pplication where g ate cu rrent lim ited such as small motor control, gate driver for large thyristor, sensing and detecting circuits.

We supply IGT=30㎂~100㎂ level products for customer's special requirement.

Key Features

Repetitive Peak Off-State Voltage : 600V.
R. M. S On-State Current ( IT(RMS)= 1.0 A ).
Low On-State Voltage (1.3V(Typ. )) General.

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CR100-8 sensitive gate silicon controlled rectifiers by Apollo Electron - Datasheet Preview

Datasheet Details

Part number	CR100-8
Manufacturer	Apollo Electron
File Size	755.79 KB
Description	Sensitive Gate Silicon Controlled Rectifiers
Datasheet	CR100-8 Datasheet

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CR100-8 Sensitive Gate Silicon Controlled Rectifiers Symbol ○ 3. Anode ▼ ○ 2.Gate 1.Cathode ○ BVDRM = 600V IT(RMS) = 1.0A ITSM = 10A Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 1.0 A ) ◆ Low On-State Voltage (1.3V(Typ.)) General Description TO-92 1 2 3 Sensitive-gate triggering thyristor is suit able for the a pplication where g ate cu rrent lim ited such as small motor control, gate driver for large thyristor, sensing and detecting circuits. We supply IGT=30㎂~100㎂ level products for customer's special requirement. Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified ) Symbol Parameter Condition VDRM IT(AV) IT(RMS) ITSM I2t Repetitive Peak Off-State Voltage Average On-State Current R.M.